PART |
Description |
Maker |
K6T0808C1D K6T0808C1D-B K6T0808C1D-DB55 K6T0808C1D |
32Kx8 bit Low Power CMOS Static RAM
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Samsung semiconductor
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KM62256CL KM62256CLTGI-7L KM62256CLG-4 KM62256CLG- |
32Kx8 bit Low Power CMOS Static RAM 32Kx8 bit Low Power CMOS Static RAM 32Kx8位低功耗CMOS静态RAM
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Samsung Electronic SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd.
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K6X0808C1D-TQ55 K6X0808C1D-GF55 K6X0808C1D-DF55 K6 |
32Kx8 bit Low Power CMOS Static RAM 32Kx8位低功耗CMOS静态RAM
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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AS7C256 AS7C256-10 AS7C256-10JC AS7C256-10PC AS7C2 |
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix) High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 35 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDIP28 High Performance 32Kx8 CMOS SRAM 高性能32Kx8 CMOS SRAM High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDIP28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
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ETC[ETC] ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor, Corp. Alliance Semiconductor ...
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KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA 512Kx8 bit CMOS static RAM, 100ns, low power 512Kx8 bit CMOS static RAM, 70ns, low power
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) Asynchronous 4M(512Kx8) bits Static RAM
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BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor] Brilliance Semiconducto...
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M38023E7 M38022E3 M38021E2 M38025M2 M38025M1 M3802 |
RAM size: 256bytes; single-chip 8-bit CMOS microcomputer RAM size: 192bytes; single-chip 8-bit CMOS microcomputer 1-Ch. 10-Bit 1.25 MSPS ADC 8-Ch., DSP/SPI, Hardware Configurable, Low Power 24-SOIC -40 to 85 TRANS PREBIASED NPN 200MW SOT-23 Screwless Socket Brdg.(50 pk) 8-BIT SINGLE-CHIP MICROCOMPUTER R1 单芯位CMOS微机 Single Output LDO, 500mA, Fixed(2.5V), Tight Output Accuracy of 2%, Thermal Overload Protection 20-TSSOP 0 to 125 单芯位CMOS微机 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机 Single Chip 8-Bit CMOS Microcomputer Single Chip 8-bit Microcomputer RAM size: 384bytes; single-chip 8-bit CMOS microcomputer RAM size: 512bytes; single-chip 8-bit CMOS microcomputer RAM size: 640bytes; single-chip 8-bit CMOS microcomputer RAM size: 1024bytes; single-chip 8-bit CMOS microcomputer RAM size: 768bytes; single-chip 8-bit CMOS microcomputer
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Mitsubishi Electric Sem... http:// Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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27LV256-20IL 27LV256-20IP 27LV256-20SO 27LV256 27L |
256K (32Kx8) low-voltage CMOS EPROM 256K (32K x 8) Low-Voltage CMOS EPROM 256K2K的8)低电压的CMOS存储 256K (32K x 8) Low-Voltage CMOS EPROM(3.0~5.5V,256K浣?CMOS EPROM)
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MICROCHIP[Microchip Technology] Microchip Technology Inc. Microchip Technology, Inc.
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BS62LV2563TC BS62LV2563TI BS62LV2563 BS62LV2563DC |
5V ECL Differential Receiver; Package: SOIC; No of Pins: 8; Container: Rail Very Low Power/Voltage CMOS SRAM 32K X 8 bit 非常低功电压CMOS SRAM32K的8 Very Low Power/Voltage CMOS SRAM 32K X 8 bit 非常低功电压CMOS SRAM2K的8
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Brilliance Semiconducto... BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
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